Following are some of RF power amplifiers designed by DRDO and manufactured by local vendors under transfer of technology programme of DRDO.

1-2 GHz Power Amplifier

A solid-state L-band power amplifier has been realised by utilising state-of-the-art MOSFET modules. The power amplifier has built-in control circuits and protection circuits for high temperature and load VSWR. It is used for electronic attack applications.

20-100MHz (VHF), 1.0 kW Power Amplifier


The state-of-the-art microprocessor controlled VHF amplifier comprises a MOSFET-based power amplifier, fast filter switching unit and a switched mode power supply. Amplifier can be operated on IEEE-488 bus or through front panel controls. With excellent BITE facility, adequate built-in protection and features like noise quietening and graceful degradation, the amplifier is iDEAL for electronic countermeasure applications.
Other applications include EMI/RFI susceptibility testing, high power calibration, testing of RF components, communication booster, etc.